S4PBHM3_A/I
Vishay General Semiconductor - Diodes Division
Deutsch
Artikelnummer: | S4PBHM3_A/I |
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Hersteller / Marke: | Vishay General Semiconductor – Diodes Division |
Teil der Beschreibung.: | DIODE GEN PURP 100V 4A TO277A |
Datenblätte: |
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RoHs Status: | |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
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Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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Spannung - Forward (Vf) (Max) @ If | 1.1 V @ 4 A |
Spannung - Sperr (Vr) (max) | 100 V |
Technologie | Standard |
Supplier Device-Gehäuse | TO-277A (SMPC) |
Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
Serie | Automotive, AEC-Q101, eSMP® |
Rückwärts-Erholzeit (Trr) | 2.5 µs |
Verpackung / Gehäuse | TO-277, 3-PowerDFN |
Produkteigenschaften | Eigenschaften |
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Paket | Tape & Reel (TR) |
Betriebstemperatur - Anschluss | -55°C ~ 150°C |
Befestigungsart | Surface Mount |
Strom - Sperrleckstrom @ Vr | 10 µA @ 100 V |
Strom - Richt (Io) | 4A |
Kapazität @ Vr, F | 30pF @ 4V, 1MHz |
Grundproduktnummer | S4P |
S4PBHM3_A/I Einzelheiten PDF [English] | S4PBHM3_A/I PDF - EN.pdf |
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
VISHAY TO-277
DIODE GEN PURP 200V 4A TO277A
VISHAY TO-277
VISHAY TO-277
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 200V 4A TO277A
DIODE GEN PURP 100V 4A TO277A
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() S4PBHM3_A/IVishay General Semiconductor - Diodes Division |
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